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Donor and defect electronic spins in solids are promising platforms for quantum technologies. The donor electron spins in phosphorus-doped silicon have some of the longest coherence times observed in solid-state spin systems. In lightly doped natural abundance silicon the dominant source of decoherence is due to hyperfine field fluctuations induced by magnetic dipolar interactions between the 4.9% abundant silicon-29 nuclei. As a result, most donor-based spin-qubits are fabricated on isotopically engineered silicon-28 lattices. However, the silicon-29 spins can be valuable local probes of the donor electron wavefunction. In this talk I will share the results of our study of the central spin physics of phosphorus donor electrons in natural abundance silicon at high magnetic field (~8.6 T). We find that the spectral diffusion time is shorter and exhibits a larger anisotropy with respect to crystal orientation in the magnetic field compared to previous experiments at lower fields. We also find that low-power, above bandgap optical excitation increases the spectral diffusion time, recovering the low-field spectral diffusion time at most crystal orientations.